Description
MOSFET N/P-CH 20V 2A 6-TSOP Series: TrenchFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 2A, 1.5A Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250米A (Min) Gate Charge (Qg) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 830mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP
Part Number | SI3585DV-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | AVX |
Description | MOSFET N/P-CH 20V 2A 6-TSOP |
Series | TrenchFET |
Packaging | |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2A, 1.5A |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 2.4A, 4.5V |
Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 830mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | 6-TSOP |
Image |
SI3585DV-T1-E3
AVX Corporation
3332
0.97
HK HEQING ELECTRONICS LIMITED
SI3585DV-T1-E3
AVX/KYOCERA
1830
2.0275
Gallop Great Holdings (Hong Kong) Limited
SI3585DV-T1-E3
AVX
55200
3.085
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI3585DV-T1-E3
AVX Corporation
4868000
4.1425
Shenzhen WTX Capacitor Co., Ltd.
SI3585DV-T1-E3
AVX/KYOCERA
18000
5.2
Nosin (HK) Electronics Co.